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| GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Silicon IGBT Ignition Coil Driver REJ03G1249-0200 Rev.2.00 Jul. 14, 2005 Features * Including Clamping Zener VCL = 400 V(typ) * Low saturation Voltage VCE(sat) = 1.4 V(typ) * SMD package LDPAK Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) 4 C 1 1 2 2 G 3 1. Gate 2. Collector 3. Emitter 4. Collector 3 E Absolute Maximum Ratings (Ta = 25C) Item Collector to emitter voltage Gate to Emitter voltage Emitter to Collector voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Notes: 1. Value at Tc = 25C Symbol VCES VGES VECS IC iC(peak) PCNote1 Tj Tstg Ratings 370 20 24 14 18 60 150 -55 to +150 Unit V V V A A W C C Rev.2.00 Jul. 14, 2005, page 1 of 7 GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Electrical Characteristics (Ta = 25C) Item Collector to Emitter breakdown voltage Gate to Emitter breakdown voltage Collector cutoff current Gate cutoff current Collector to emitter saturation voltage Collector to emitter saturation voltage Gate to emitter cutoff voltage Turn-on delay time Rise time Turn-off delay time Fall time Input capacitance Output capacitance Reveres transfer capacitance Secondary breakdown energy Symbol V(BR)CES V(BR)GES ICES IGES VCE(sat)1 VCE(sat)2 VGE(off) td(on) tr td (off) tf Ciss Coss Cres Es/b Min 370 20 -- -- -- -- 1.3 -- -- -- -- -- -- -- 230 Typ 400 -- -- -- 1.4 1.6 -- 0.2 0.4 1.0 5 1110 75 18 -- Max 430 -- 100 100 1.7 2.2 2.2 -- -- -- -- -- -- -- -- Unit V V A A V V V s s s s pF pF pF mJ Test Conditions Ic = 2 mA, VGE = 0 V IG = 100 A, VCE = 0 V VCE = 300 V, VGE = 0 V VGE = 20 V, VCE = 0 V IC = 8 A, VGE = 10 V IC = 8 A, VGE = 4 V IC = 1 mA, VCE = 10 V VCE = 300 V, RL = 50 , VGE = 5 V, RG = 200 VCE = 10 V, VGE = 0, f = 1 MHz L = 5 mH Rev.2.00 Jul. 14, 2005, page 2 of 7 GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Main Characteristics Power vs. Temperature Derating 80 100 Maximum Safe Operation Area Pc (W) IC (A) 60 10 DC PW Collector Dissipation Op = Collector Current er 10 ati m on s( 1m 10 s 10 0 s 40 1 (T 1s s c= ho t) 25 C ) 20 0.1 Ta = 25C 0 0 0.01 50 100 150 200 1 3 10 30 100 300 1000 Case Temperature Tc (C) Collector to Emitter Voltage VCE (V) Collector to Emitter Breakdown Voltage vs. Case Temperature Collector to Emitter Breakdown Voltage V(BR)CES (V) 500 10 Typical Output Characteristics 10 V 15 V 8 6V 4V Pulse Test 450 IC (A) Collector Current 6 400 4 350 IC = 2 mA 0 50 100 150 2 0 0 2 4 VGE = 2 V 6 8 10 300 -50 Case Temperature Tc (C) Collector to Emitter Voltage VCE (V) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage Collector to Emitter Saturation Voltage VCE(sat) (V) 5 Pulse Test 4 Typical Transfer Characteristics 20 VCE = 10 V Pulse Test 16 IC 12 (A) Collector Current 3 IC = 10 A 8 Tc = 125C 25C -40C 0 0 1 2 3 4 5 2 4 1 0 8A 6A 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V) Rev.2.00 Jul. 14, 2005, page 3 of 7 GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage VCE(sat) (V) 10 5 10000 3000 Typical Capacitance vs. Collector to Emitter Voltage Capacitance C (pF) Cies 1000 300 100 30 Cres 10 3 1 VGE = 0 f = 1 MHz 0 10 20 30 40 50 Coes 2 1 0.5 -40C 25C Tc = 125C 0.2 0.1 0.1 VGE = 10 V Pulse Test 0.3 1 3 10 30 100 Collector Current IC (A) Collector to Emitter Voltage VCE (V) Dynamic Input Characteristics VCE (V) VGE (V) 50 IC = 10 A Ta = 25C VCE = 16 V 20 VGE 10 3 1 0.3 0.1 Switching Characteristics tf 40 16 Collector to Emitter Voltage Switching Time t (s) 30 12 Gate to Emitter Voltage td(off) tr 20 8 10 VCE 0 20 40 60 80 td(on) 0.03 0.01 0.1 VCC = 300 V, VGE = 10 V Rg = 200 , Ta = 25C 0.2 0.5 1 2 5 10 4 0 0 100 Gate Charge Qg (nc) Collector Current IC (A) 100 50 20 10 5 2 VCC = 16 V 1 0.1 VGE = 10 V, Rg = 200 Tc = 140C 25C Secondary breakdown energy Es/b (mJ) Secondary Breakdown Current vs. Inductance Ratio ISC (A) Secondary Breakdown Energy vs. Case Temperature 1000 500 200 100 50 20 10 25 VCC = 16 V, L = 5 mH VGE = 10 V, Rg = 200 Secondary breakdown Current 0.2 0.5 1 2 5 10 50 75 100 125 Inductance Ratio L (mH) Case Temperature Tc (C) Rev.2.00 Jul. 14, 2005, page 4 of 7 GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.2 0.1 0.1 0.05 0.3 0.03 0.02 0.01 0.05 1s t ho pu lse ch - c(t) = s (t) * ch - c ch - c = 2.08C/W, Tc = 25C PDM PW T D= PW T 0.03 0.01 10 100 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Ic Monitor R Vin Monitor Vin 10% Waveform 90% 90% Rg Vin = 10 V D.U.T. V CC Ic td(on) 10% tr ton 90% 10% td(off) toff tf Rev.2.00 Jul. 14, 2005, page 5 of 7 GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Package Dimensions JEITA Package Code RENESAS Code PRSS0004AE-A Package Name LDPAK(L) / LDPAK(L)V MASS[Typ.] 1.40g Unit: mm (1.4) 4.44 0.2 10.2 0.3 1.3 0.15 11.3 0.5 0.3 10.0 + 0.5 - 8.6 0.3 1.3 0.2 1.37 0.2 0.76 0.1 2.54 0.5 2.54 0.5 11.0 0.5 0.2 0.86 + 0.1 - 2.49 0.2 0.4 0.1 JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Package Name LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g Unit: mm 4.44 0.2 10.2 0.3 (1.4) 8.6 0.3 + 0.3 - 0.5 10.0 (1.5) (1.5) 2.49 0.2 0.2 0.1 + 0.1 - 7.8 7.0 2.2 1.37 0.2 1.3 0.2 2.54 0.5 0.3 3.0 + 0.5 - 0.2 0.86 + 0.1 - 0.4 0.1 2.54 0.5 Rev.2.00 Jul. 14, 2005, page 6 of 7 1.7 1.3 0.15 7.8 6.6 GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Ordering Information Part Name GN4014ZB4LD GN4014ZB4LS GN4014ZB4LM Quantity 50 pcs. 1000 pcs. 1000 pcs. Sack Taping Taping Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Jul. 14, 2005, page 7 of 7 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 (c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0 |
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